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Device Operation Demo and Technical Overview

Ultrasonic Wire Bonding for MOSFET Power Devices – Welding Demonstration
3:45Semiconductor

Ultrasonic Aluminum Wire Bonding for MOSFET Power Device Welding Demonstration

Real-world footage of ultrasonic aluminum wire bonding, enabling precision interconnection for MOSFETs, power transistors, and Schottky diodes. Widely used in power modules, new energy devices, industrial power components, and semiconductor discrete device packaging.

Ultrasonic Aluminum Wire Bonding: Prototype Gallery
3:30Semiconductor

Ultrasonic Aluminum Wire Bonding: Sample Gallery

IGBT modules, TO252, battery tab terminals, BMS sampling wires, and cell series-parallel connections—all handled. Extendable to automotive ECUs, photovoltaic inverters, medical electronics, and RF modules. Room-temperature bonding with no solder, atomic-level connections, high vibration resistance, and low internal resistance.